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Jun 23
N-type and P-type semiconductors are formed by introducing impurities into a pure semiconductor material.
N-type semiconductor:
To form an N-type semiconductor, a small amount of a pentavalent impurity (such as phosphorus or arsenic) is added to a pure semiconductor material (such as silicon or germanium). These impurities have five valence electrons, one more than the four valence electrons of the semiconductor material. When the impurity atoms are added to the semiconductor crystal lattice, the extra electron is not tightly bound to any particular atom and can move freely throughout the crystal. This creates an excess of negative charge carriers (electrons) in the material, making it an N-type semiconductor.
P-type semiconductor:
To form a P-type semiconductor, a small amount of a trivalent impurity (such as boron or gallium) is added to a pure semiconductor material. These impurities have three valence electrons, one less than the four valence electrons of the semiconductor material. When the impurity atoms are added to the semiconductor crystal lattice, they create "holes" or vacancies where an electron could be. These holes act as positive charge carriers in the material. This creates an excess of positive charge carriers (holes) in the material, making it a P-type semiconductor.
In both cases, the addition of impurities changes the conductivity of the semiconductor material by increasing the number of charge carriers (either electrons or holes) available for conduction. This allows for the creation of electronic devices such as diodes and transistors.
N-type semiconductor:
To form an N-type semiconductor, a small amount of a pentavalent impurity (such as phosphorus or arsenic) is added to a pure semiconductor material (such as silicon or germanium). These impurities have five valence electrons, one more than the four valence electrons of the semiconductor material. When the impurity atoms are added to the semiconductor crystal lattice, the extra electron is not tightly bound to any particular atom and can move freely throughout the crystal. This creates an excess of negative charge carriers (electrons) in the material, making it an N-type semiconductor.
P-type semiconductor:
To form a P-type semiconductor, a small amount of a trivalent impurity (such as boron or gallium) is added to a pure semiconductor material. These impurities have three valence electrons, one less than the four valence electrons of the semiconductor material. When the impurity atoms are added to the semiconductor crystal lattice, they create "holes" or vacancies where an electron could be. These holes act as positive charge carriers in the material. This creates an excess of positive charge carriers (holes) in the material, making it a P-type semiconductor.
In both cases, the addition of impurities changes the conductivity of the semiconductor material by increasing the number of charge carriers (either electrons or holes) available for conduction. This allows for the creation of electronic devices such as diodes and transistors.
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Google Gemini AI
Jun 23
N-type Semiconductor
- Diffusion: Boron atoms (a trivalent dopant) are introduced into an intrinsic semiconductor crystal.
- Bonding: Boron atoms replace some silicon atoms in the crystal lattice.
- Electron Release: Each boron atom creates a hole in the valence band by accepting an electron from a neighboring silicon atom.
- Free Electrons: The released electrons become free electrons that can move around the crystal.
- Majority Carriers: In N-type semiconductors, electrons are the majority carriers, while holes are the minority carriers.
P-type Semiconductor
- Diffusion: Phosphorus atoms (a pentavalent dopant) are introduced into an intrinsic semiconductor crystal.
- Bonding: Phosphorus atoms form covalent bonds with four silicon atoms in the crystal lattice, leaving one extra electron.
- Hole Creation: The extra electrons create broken bonds in the valence band, forming holes.
- Free Holes: The holes are free to move around the crystal.
- Majority Carriers: In P-type semiconductors, holes are the majority carriers, while electrons are the minority carriers.
Summary
- N-type semiconductor: Boron atoms are added, creating free electrons (majority carriers).
- P-type semiconductor: Phosphorus atoms are added, creating free holes (majority carriers).
- Diffusion: Boron atoms (a trivalent dopant) are introduced into an intrinsic semiconductor crystal.
- Bonding: Boron atoms replace some silicon atoms in the crystal lattice.
- Electron Release: Each boron atom creates a hole in the valence band by accepting an electron from a neighboring silicon atom.
- Free Electrons: The released electrons become free electrons that can move around the crystal.
- Majority Carriers: In N-type semiconductors, electrons are the majority carriers, while holes are the minority carriers.
P-type Semiconductor
- Diffusion: Phosphorus atoms (a pentavalent dopant) are introduced into an intrinsic semiconductor crystal.
- Bonding: Phosphorus atoms form covalent bonds with four silicon atoms in the crystal lattice, leaving one extra electron.
- Hole Creation: The extra electrons create broken bonds in the valence band, forming holes.
- Free Holes: The holes are free to move around the crystal.
- Majority Carriers: In P-type semiconductors, holes are the majority carriers, while electrons are the minority carriers.
Summary
- N-type semiconductor: Boron atoms are added, creating free electrons (majority carriers).
- P-type semiconductor: Phosphorus atoms are added, creating free holes (majority carriers).
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